The HAT1055R-EL-E is a dual P-channel FET switch from Renesas, featuring a maximum drain current of 5A and a maximum drain-source on resistance of 130mR. It can withstand a minimum breakdown voltage of 60V and is constructed with metal-oxide semiconductor technology. The device is packaged in a rectangular shape with a plastic body and a small outline meter style. It is designed for surface mount applications and is compliant with RoHS and JESD-30 standards.
Checking distributor stock and pricing after the page loads.
Renesas HAT1055R-EL-E technical specifications.
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 130mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 40A |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
No datasheet is available for this part.
