The HAT2168H-E is a power MOSFET from Renesas with a continuous drain current of 30A. It has a gate to source voltage of 20V and operates within a temperature range of -55°C to 150°C. The device is designed for surface mount applications and is supplied on tape and reel. The MOSFET has a fall time of 4ns and turn-on and turn-off delay times of 8ns and 40ns, respectively.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Renesas HAT2168H-E datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Renesas HAT2168H-E technical specifications.
| Continuous Drain Current (ID) | 30A |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 8ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Renesas HAT2168H-E to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.