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Technical Specifications
Renesas HS54097TZ-E technical specifications.
General
| Drain Current-Max (Abs) (ID) | 150mA |
| Drain Current-Max (ID) | 150mA |
| Drain-source On Resistance-Max | 25R |
| DS Breakdown Voltage-Min | 600V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-92 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Round |
| Package Style | CYLINDRICALMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 750mW |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Form | Wire |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas HS54097TZ-E Datasheet
Download the complete datasheet for Renesas HS54097TZ-E to view detailed technical specifications.
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