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Technical Specifications
Renesas HVC358BTRF-E technical specifications.
General
Diode Capacitance Ratio-Min
2.2
Diode Element Material
SILICON
Diode Type
VARIABLE CAPACITANCE
JESD-30 Code
R-PDSO-F2
JESD-609 Code
e6
Min Breakdown Voltage
15V
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Flat
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Compliance
RoHS
Compliant
Datasheet
Renesas HVC358BTRF-E Datasheet
Download the complete datasheet for Renesas HVC358BTRF-E to view detailed technical specifications.
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