This N-channel MOSFET is designed for high-current switching applications and is supplied in a TO-263 package. It supports 60 V drain-to-source voltage, ±100 A continuous drain current, and ±400 A pulsed drain current. Typical on-resistance is 3.3 mΩ and is 4.2 mΩ maximum at VGS 10 V and ID 50 A, with 7730 pF typical input capacitance. The device has 156 W total power dissipation at TC 25 °C, operates up to 150 °C channel temperature, and is identified as RoHS compliant.
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Renesas N0601N technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | ±100A |
| Pulsed Drain Current | ±400A |
| On-Resistance | 3.3 typmΩ |
| On-Resistance | 4.2 maxmΩ |
| Input Capacitance | 7730 typpF |
| Output Capacitance | 560 typpF |
| Reverse Transfer Capacitance | 290 typpF |
| Total Gate Charge | 133 typnC |
| Gate-Source Charge | 38 typnC |
| Gate-Drain Charge | 38 typnC |
| Body Diode Forward Voltage | 1.5 maxV |
| Reverse Recovery Time | 44 typns |
| Reverse Recovery Charge | 61 typnC |
| Power Dissipation | 156 at TC=25°CW |
| Power Dissipation | 1.5 at TA=25°CW |
| Channel Temperature | 150 max°C |
| Storage Temperature | -55 to +150°C |
| Thermal Resistance Channel-Case | 0.80°C/W |
| Thermal Resistance Channel-Ambient | 83.3°C/W |
| RoHS | Compliant |
