This N-channel power MOSFET is designed for high-current switching applications and is rated for 60 V drain-to-source voltage and 100 A continuous drain current. It offers a maximum 4.6 mΩ on-state resistance at a 10 V gate drive, with typical input capacitance of 7730 pF and typical total gate charge of 133 nC. The device is supplied in a 3-lead TO-220AB package and supports up to 156 W total power dissipation at case temperature, with channel temperature up to 150 °C. It is qualified for industrial use, is RoHS compliant, and is packaged in 50-piece magazine tubes.
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Renesas N0602N technical specifications.
| Qualification Level | Industrial |
| Channel Type | N-Channel |
| Channels | 1 |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Pulse Drain Current | 400A |
| Gate-Source Voltage | ±20V |
| On-Resistance RDS(on) Max @ VGS=10V, ID=50A | 4.6mΩ |
| Power Dissipation @ TC=25°C | 156W |
| Input Capacitance Ciss Typ | 7730pF |
| Total Gate Charge Qg Typ | 133nC |
| Thermal Resistance Junction-to-Case Max | 0.8°C/W |
| Thermal Resistance Junction-to-Ambient Max | 83.3°C/W |
| Junction Temperature Max | 150°C |
| Storage Temperature Range | -55 to +150°C |
| Reverse Recovery Time Typ | 44ns |
| Reverse Recovery Charge Typ | 61nC |
| Lead Count | 3 |
| RoHS | Compliant |
| Lead Free | Pb-free |
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