This device is an N-channel power MOSFET designed for high-current switching applications. It is rated for 60 V drain-to-source voltage and 100 A continuous drain current, with a maximum drain-to-source on-state resistance of 4.6 mΩ at VGS = 10 V. The part is offered in a 3-lead TO-262 / I2PAK package and supports up to 156 W power dissipation at TC = 25 °C. Typical input capacitance is 7730 pF, typical total gate charge is 133 nC, and the device is specified as RoHS compliant for industrial qualification.
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Renesas N0603N technical specifications.
| Qualification Level | Industrial |
| Channel Type | Nch |
| Channels | 1 |
| Gate Level | Standard |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current | 100A |
| Pulse Drain Current | 400A |
| On-State Resistance RDS(on) Max @10V | 4.6mΩ |
| Power Dissipation @TC=25°C | 156W |
| Input Capacitance Typ | 7730pF |
| Total Gate Charge Typ | 133nC |
| Channel Temperature Max | 150°C |
| Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case Max | 0.80°C/W |
| Reverse Recovery Time Typ | 44ns |
| RoHS | Compliant |
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