This device is an N-channel power MOSFET designed for high-current switching applications. It is rated for 60 V drain-to-source voltage and 82 A continuous drain current, with 200 A pulsed drain current capability. The transistor specifies 6.5 mΩ maximum on-state resistance at 10 V gate drive and 41 A drain current, along with 4150 pF typical input capacitance. It is housed in a TO-220 package and the datasheet lists RoHS compliance.
Checking distributor stock and pricing after the page loads.
Renesas N0604N technical specifications.
| Transistor Type | N-channel MOSFET |
| Drain to Source Voltage | 60V |
| Gate to Source Voltage | ±20V |
| Continuous Drain Current | 82A |
| Pulsed Drain Current | 200A |
| On-State Resistance | 5.1 typmΩ |
| On-State Resistance | 6.5 maxmΩ |
| Input Capacitance | 4150 typpF |
| Output Capacitance | 310 typpF |
| Reverse Transfer Capacitance | 165 typpF |
| Gate Threshold Voltage | 2.0 minV |
| Gate Threshold Voltage | 4.0 maxV |
| Forward Transfer Admittance | 30 typS |
| Turn-On Delay Time | 24 typns |
| Rise Time | 8 typns |
| Turn-Off Delay Time | 64 typns |
| Fall Time | 7 typns |
| Total Gate Charge | 75 typnC |
| Gate to Source Charge | 21 typnC |
| Gate to Drain Charge | 21 typnC |
| Body Diode Forward Voltage | 1.5 maxV |
| Reverse Recovery Time | 38 typns |
| Reverse Recovery Charge | 39 typnC |
| Power Dissipation at Case Temperature 25°C | 116W |
| Power Dissipation at Ambient Temperature 25°C | 1.5W |
| Channel Temperature | 150 max°C |
| Storage Temperature | -55 to +150°C |
| Single Avalanche Current | 35A |
| Single Avalanche Energy | 125mJ |
| Thermal Resistance Junction to Case | 1.08°C/W |
| Thermal Resistance Junction to Ambient | 83.3°C/W |
| RoHS | Compliant |
