This N-channel power MOSFET is rated for 60 V drain-to-source voltage and ±80 A continuous drain current. It provides a maximum 8.5 mΩ on-state resistance at VGS = 10 V and a typical input capacitance of 3300 pF. Switching characteristics include 57 nC typical total gate charge and 27 ns typical turn-on delay. The device is supplied in a Pb-free TO-220AB package, is RoHS compliant, and is intended for high-current switching. Rated limits include channel temperature to 150 °C and storage from -55 °C to 150 °C.
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Renesas N0605N technical specifications.
| Transistor Type | N-channel MOSFET |
| Drain to Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 160A |
| Drain to Source On Resistance | 8.5 maxmΩ |
| Input Capacitance | 3300 typpF |
| Output Capacitance | 240 typpF |
| Reverse Transfer Capacitance | 140 typpF |
| Gate to Source Voltage | ±20V |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Forward Transfer Admittance | 52 typS |
| Total Gate Charge | 57 typnC |
| Gate to Source Charge | 18 typnC |
| Gate to Drain Charge | 16 typnC |
| Turn-on Delay Time | 27 typns |
| Rise Time | 14 typns |
| Turn-off Delay Time | 54 typns |
| Fall Time | 11 typns |
| Power Dissipation | 92.6 at TC = 25°CW |
| Channel Temperature | 150°C |
| Storage Temperature | -55 to 150°C |
| Channel to Case Thermal Resistance | 1.35 max°C/W |
| RoHS | Compliant |
| Pb-free | Yes |
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