This N-channel MOSFET is rated for 60 V drain-to-source voltage and 65 A continuous drain current. It provides a maximum 8.4 mΩ on-state resistance at VGS = 10 V and a typical 3300 pF input capacitance at VDS = 25 V. The device is supplied in a TO-252 package with 87.4 W case-mounted power dissipation, a 150 °C channel temperature rating, and a -55 °C to 150 °C storage range. It is intended for high-current switching and is offered as a RoHS-compliant, Pb-free tape-and-reel device.
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Renesas N0607N technical specifications.
| Drain to Source Voltage | 60V |
| Gate to Source Voltage | ±20V |
| Continuous Drain Current | ±65A |
| Pulsed Drain Current | ±130A |
| Power Dissipation (TC = 25 °C) | 87.4W |
| Channel Temperature | 150°C |
| Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.43°C/W |
| Thermal Resistance Junction-to-Ambient | 125°C/W |
| Gate to Source Cut-off Voltage | 2.0 to 4.0V |
| Drain to Source On-state Resistance | 8.4 maxmΩ |
| Input Capacitance | 3300 typpF |
| Output Capacitance | 240 typpF |
| Reverse Transfer Capacitance | 140 typpF |
| Turn-on Delay Time | 24 typns |
| Total Gate Charge | 58 typnC |
| Body Diode Forward Voltage | 1.5V |
| Reverse Recovery Time | 37ns |
| RoHS | Compliant |
| Lead Free | Pb-free |
