The NE4210S01-T1B-A is a single N-channel HETERO-JUNCTION FET from Renesas, featuring a minimum breakdown voltage of 3V and a maximum drain current of 15mA. It has a maximum power dissipation of 165mW and operates at a maximum temperature of 125°C. The device is packaged in a MICROWAVEMeter style plastic package with gull wing terminals and is suitable for amplifier applications. The NE4210S01-T1B-A is compliant with RoHS and Reach SVHC regulations, indicating its use of lead-free and halogen-free materials.
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Technical Specifications
Renesas NE4210S01-T1B-A technical specifications.
General
| Case Connection | SOURCE |
| Drain Current-Max (ID) | 15mA |
| DS Breakdown Voltage-Min | 3V |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | KU BAND |
| Max Operating Temperature | 125°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Style | MICROWAVEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 165mW |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | UNSPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NE4210S01-T1B-A Datasheet
Download the complete datasheet for Renesas NE4210S01-T1B-A to view detailed technical specifications.
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