The NE856M02 is a single NPN transistor from Renesas, packaged in the SOT-89 surface mount package. It can handle a collector base voltage of up to 20V and a collector emitter voltage of up to 12V. The transistor has a maximum operating temperature range of -65°C to 150°C and a power dissipation of 1.2W. It operates at a frequency of 6.5GHz.
Renesas NE856M02 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Voltage (VCEO) | 12V |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 6.5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| RoHS | Not Compliant |
Download the complete datasheet for Renesas NE856M02 to view detailed technical specifications.
No datasheet is available for this part.