The NP36P06SLG-E1 is a single P-channel metal-oxide semiconductor field-effect transistor with a maximum drain current of 36A and a maximum power dissipation of 56W. It operates within a temperature range of -40°C to 175°C and is designed for surface mount applications. This device is not RoHS compliant.
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Technical Specifications
Renesas NP36P06SLG-E1 technical specifications.
General
| Drain Current-Max (Abs) (ID) | 36A |
| Drain Current-Max (ID) | 36A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 56W |
| RoHS Compliant | No |
| Surface Mount | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas NP36P06SLG-E1 Datasheet
Download the complete datasheet for Renesas NP36P06SLG-E1 to view detailed technical specifications.
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