The NP36P06SLG-E1 is a single P-channel metal-oxide semiconductor field-effect transistor with a maximum drain current of 36A and a maximum power dissipation of 56W. It operates within a temperature range of -40°C to 175°C and is designed for surface mount applications. This device is not RoHS compliant.
Renesas NP36P06SLG-E1 technical specifications.
| Drain Current-Max (Abs) (ID) | 36A |
| Drain Current-Max (ID) | 36A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 56W |
| RoHS Compliant | No |
| Surface Mount | Yes |
| RoHS | Not Compliant |
No datasheet is available for this part.
