Automotive-grade P-channel single power MOSFET featuring a -40V drain-source breakdown voltage and a maximum continuous drain current of 50A. This device offers a low drain-source on-resistance of 15mΩ (max) and a pulsed drain current capability of 150A. Designed for switching applications, it operates within a temperature range of -55°C to +175°C and is housed in a compact TO-252 surface-mount package with gull-wing terminals. Key specifications include a 136mJ avalanche energy rating and a feedback capacitance of 420pF (max).
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Technical Specifications
Renesas NP50P04SDG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
136mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
50A
Drain Current-Max (ID)
50A
Drain-source On Resistance-Max
15mR
DS Breakdown Voltage-Min
40V
Feedback Cap-Max (Crss)
420pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation Ambient-Max
1.2W
Power Dissipation-Max (Abs)
84W
Pulsed Drain Current-Max (IDM)
150A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
Reference Standard
AEC-Q101
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP50P04SDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP50P04SDG-E1-AY to view detailed technical specifications.
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