This N-channel power MOSFET is designed for high-current switching in automotive and industrial systems. It supports 55 V drain-to-source voltage, 60 A continuous drain current at case temperature, and 105 W power dissipation, with a maximum 6.0 mΩ on-state resistance at 10 V gate drive. Typical input capacitance is 2500 pF and total gate charge is 42 nC, enabling fast switching with nanosecond-scale rise and fall times. The device is supplied in a TO-220 package, uses pure tin lead plating, operates up to 175 °C channel temperature, and is AEC-Q101 qualified.
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Renesas NP60N055MUK technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 55V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 60A |
| Pulsed Drain Current | 240A |
| Power Dissipation | 105W |
| On-State Resistance | 6.0 maxmΩ |
| Input Capacitance | 2500 typpF |
| Output Capacitance | 260 typpF |
| Reverse Transfer Capacitance | 100 typpF |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Total Gate Charge | 42 typnC |
| Gate-Source Charge | 11 typnC |
| Gate-Drain Charge | 10 typnC |
| Reverse Recovery Time | 44 typns |
| Operating Junction Temperature | 175 max°C |
| Storage Temperature | -55 to 175°C |
| Thermal Resistance Junction-Case | 1.43°C/W |
| Pb-free | Yes |
