This device is an N-channel power MOSFET designed for high-current switching applications. It supports 55 V drain-to-source voltage, 90 A continuous drain current at 25°C case temperature, and 147 W total power dissipation at 25°C case temperature. The transistor features 4.40 mΩ maximum on-state resistance at 10 V gate drive and 45 A drain current, with typical input capacitance of 4000 pF and total gate charge of 68 nC. It is qualified for automotive use to AEC-Q101, uses a TO-220 package designated MP-25K, and is supplied in tubes of 50 pieces with Pb-free lead plating.
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Renesas NP89N055MUK technical specifications.
| Transistor type | N-channel MOSFET |
| Drain-to-source voltage | 55V |
| Gate-to-source voltage | ±20V |
| Continuous drain current | 90A |
| Pulsed drain current | 360A |
| Total power dissipation | 147W |
| Channel temperature | 175°C |
| Storage temperature range | -55 to 175°C |
| Drain-to-source on-state resistance | 4.40 maxmΩ |
| Gate threshold voltage | 2.0 to 4.0V |
| Input capacitance | 4000 typpF |
| Output capacitance | 410 typpF |
| Reverse transfer capacitance | 150 typpF |
| Total gate charge | 68 typnC |
| Reverse recovery time | 47 typns |
| Thermal resistance junction-to-case | 1.02°C/W |
| Aec-q101 | Qualified |
| Pb-free | Yes |
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