This device is an N-channel power MOSFET rated for 60 V drain-to-source voltage and 100 A continuous drain current. It is housed in a TO-220AB package and is specified for high speed switching, low drive current, and low on-resistance. The datasheet lists 3.1 mΩ typical and 3.9 mΩ maximum on-state resistance at 50 A with a 10 V gate drive. Absolute maximum ratings include 300 A pulsed drain current, 150 W channel dissipation, and 150 °C channel temperature. Input, output, and reverse transfer capacitances are specified at 6450 pF, 1400 pF, and 330 pF respectively, and typical total gate charge is 90 nC.
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Renesas RJK0602DPN-E0 technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage | 60V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current | 100A |
| Pulsed Drain Current | 300A |
| Avalanche Current | 50A |
| Avalanche Energy | 188mJ |
| Power Dissipation | 150W |
| Thermal Resistance Junction-to-Case | 0.83°C/W |
| Maximum Channel Temperature | 150°C |
| Storage Temperature Range | -55 to +150°C |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Drain-to-Source On-Resistance | 3.1 typ, 3.9 maxmΩ |
| Input Capacitance | 6450pF |
| Output Capacitance | 1400pF |
| Reverse Transfer Capacitance | 330pF |
| Total Gate Charge | 90nC |
| Reverse Recovery Time | 60ns |
Download the complete datasheet for Renesas RJK0602DPN-E0 to view detailed technical specifications.
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