This N-channel power MOSFET is rated for 60 V drain-to-source voltage and 80 A continuous drain current. It uses a TO-220ABA through-hole package and provides 4.1 mΩ typical drain-to-source on-resistance at a 10 V gate drive, with 5.2 mΩ maximum under the same condition. The device supports 240 A pulsed drain current, 125 W channel dissipation, and a maximum channel temperature of 150 °C. Typical dynamic characteristics include 57 nC total gate charge, 4150 pF input capacitance, and 50 ns reverse recovery time.
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Renesas RJK0603DPN-A0 technical specifications.
| Channel Type | N-Channel |
| Drain to Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 240A |
| Gate to Source Voltage | ±20V |
| Drain-Source On Resistance (typ) | 4.1mΩ |
| Drain-Source On Resistance (max) | 5.2mΩ |
| Power Dissipation | 125W |
| Channel Temperature | 150°C |
| Storage Temperature | -55 to +150°C |
| Thermal Resistance, Channel to Case | 1.0°C/W |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Input Capacitance | 4150pF |
| Output Capacitance | 950pF |
| Reverse Transfer Capacitance | 230pF |
| Total Gate Charge | 57nC |
| Reverse Recovery Time | 50ns |
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