The RJK0651DPB is a silicon N-channel power MOSFET designed for high-speed switching applications, including motor drives and load switching. It features a low on-resistance of typically 11.5 mΩ at 10V Vgs and is capable of high-density mounting in an LFPAK package.
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| Drain to Source Voltage | 60V |
| Continuous Drain Current | 25A |
| RDS(on) typ at 10V | 11.5mOhms |
| Gate to Source Voltage | 20V |
| Channel Dissipation | 35W |
| Operating Temperature | 150°C |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
These are design resources that include the Renesas RJK0651DPB-00#J5
Evaluation board for the LT8603 quad output regulator, providing four regulated outputs (5V, 3.3V, 1.8V, and 8V) from a 3V to 42V input for automotive and industrial use.
