The RMLV1616AGSA-5S2#KA0 is a 16-Mbit asynchronous Low Power SRAM (LPSRAM) organized as 1,048,576-word x 16-bit or 2,097,152-word x 8-bit. Developed using Renesas' Advanced LPSRAM technology, it offers high soft error immunity and ultra-low standby current, making it ideal for battery backup applications. The device operates on a single 2.7V to 3.6V supply and features a high-speed access time of 55ns.
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Technical Specifications
Renesas RMLV1616AGSA-5S2#KA0 technical specifications.
General
| Memory Density | 16Mbit |
| Organization | 1M x 16 / 2M x 8word x bit |
| Access Time | 55ns |
| Supply Voltage (Min) | 2.7V |
| Supply Voltage (Max) | 3.6V |
| Standby Current (Typ @ 25°C) | 0.4µA |
| Operating Temperature (Min) | -40°C |
| Operating Temperature (Max) | 85°C |
| Soft Error Immunity | < 0.04FIT/Mb |
Compliance
| RoHS | Compliant |
| Pb-free | Yes |
| Msl | 3 |
Datasheet
Renesas RMLV1616AGSA-5S2#KA0 Datasheet
Download the complete datasheet for Renesas RMLV1616AGSA-5S2#KA0 to view detailed technical specifications.
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