The UPA1728G-E2-A is a single N-channel metal-oxide semiconductor FET from Renesas. It can handle a maximum drain current of 9A and a maximum power dissipation of 2W. The device operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations. It is designed for surface mount applications.
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Technical Specifications
Renesas UPA1728G-E2-A technical specifications.
General
| Drain Current-Max (Abs) (ID) | 9A |
| Drain Current-Max (ID) | 9A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA1728G-E2-A Datasheet
Download the complete datasheet for Renesas UPA1728G-E2-A to view detailed technical specifications.
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