The UPA1730G-E1-A is a single P-channel metal-oxide semiconductor field-effect transistor (FET) with a maximum drain current of 13A and maximum power dissipation of 2.2W. It operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations. The device is designed for surface mount applications and features a tin terminal finish.
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Technical Specifications
Renesas UPA1730G-E1-A technical specifications.
General
| Drain Current-Max (Abs) (ID) | 13A |
| Drain Current-Max (ID) | 13A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2.2W |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA1730G-E1-A Datasheet
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