The uPA1813GR-9JG is a single P-channel metal-oxide semiconductor FET from Renesas with a maximum drain current of 5A and on-resistance of 40mR. It has a minimum breakdown voltage of 12V and a maximum power dissipation of 2W. The device is qualified for surface mount and has a maximum operating temperature of 150°C. It is packaged in a small outline rectangular shape with a plastic body and tin terminals.
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Technical Specifications
Renesas uPA1813GR-9JG technical specifications.
General
| Drain Current-Max (Abs) (ID) | 5A |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 40mR |
| DS Breakdown Voltage-Min | 12V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas uPA1813GR-9JG Datasheet
Download the complete datasheet for Renesas uPA1813GR-9JG to view detailed technical specifications.
No datasheet is available for this part.