The UPA573T is a dual P-channel metal-oxide semiconductor FET from Renesas with a maximum drain current of 100mA and a maximum drain-source on resistance of 25 ohms. It has a minimum breakdown voltage of 30V and a maximum power dissipation of 200mW. The device is packaged in a rectangular small outline package made of plastic and has a gull wing terminal form with a tin finish. The UPA573T is suitable for switching applications and has a maximum operating temperature of 80°C.
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Technical Specifications
Renesas UPA573T technical specifications.
General
| Drain Current-Max (Abs) (ID) | 100mA |
| Drain Current-Max (ID) | 100mA |
| Drain-source On Resistance-Max | 25R |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G5 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 80°C |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 200mW |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas UPA573T Datasheet
Download the complete datasheet for Renesas UPA573T to view detailed technical specifications.
No datasheet is available for this part.