The UPA602T is a dual N-channel metal-oxide semiconductor MOSFET from Renesas. It features a maximum drain current of 100mA and a minimum breakdown voltage of 50V. The device has a maximum on-resistance of 30 ohms and a maximum power dissipation of 300 milliwatts. The UPA602T is available in a small outline rectangular package made of plastic, with a gull wing terminal form and a tin finish. The device is not qualified and is not RoHS compliant.
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Technical Specifications
Renesas UPA602T technical specifications.
General
| Drain Current-Max (Abs) (ID) | 100mA |
| Drain Current-Max (ID) | 100mA |
| Drain-source On Resistance-Max | 30R |
| DS Breakdown Voltage-Min | 50V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300mW |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas UPA602T Datasheet
Download the complete datasheet for Renesas UPA602T to view detailed technical specifications.
No datasheet is available for this part.