The UPA679TB is a dual N-channel/P-channel FET from Renesas with a maximum operating temperature of 150°C. It features a maximum drain current of 350mA and a maximum drain-source on resistance of 600mΩ. The device is packaged in a 6-pin R-PDSO-G6 package with a plastic body and a tin terminal finish. It is not RoHS compliant and is not qualified.
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Technical Specifications
Renesas UPA679TB technical specifications.
General
| Drain Current-Max (Abs) (ID) | 350mA |
| Drain Current-Max (ID) | 350mA |
| Drain-source On Resistance-Max | 600mR |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL, P-CHANNEL |
| Power Dissipation-Max (Abs) | 200mW |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas UPA679TB Datasheet
Download the complete datasheet for Renesas UPA679TB to view detailed technical specifications.
No datasheet is available for this part.