The UPA801T is a dual NPN amplifier transistor from Renesas with a maximum collector current of 100mA and a maximum operating temperature of 150°C. It features a high DC current gain of 70 and a transition frequency of 4.5GHz, making it suitable for ultra-high frequency applications. The transistor is packaged in a small rectangular shape with a plastic body and gull wing terminals. It is qualified for surface mount and is compliant with RoHS regulations.
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Technical Specifications
Renesas UPA801T technical specifications.
General
| Collector-base Capacitance-Max | 1.5pF |
| Collector-emitter Voltage-Max | 12V |
| DC Current Gain-Min (hFE) | 70 |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G6 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | NPN |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 4.5GHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas UPA801T Datasheet
Download the complete datasheet for Renesas UPA801T to view detailed technical specifications.
No datasheet is available for this part.