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Technical Specifications
Renesas UPA828TD-A technical specifications.
General
| Collector-base Capacitance-Max | 0.8pF |
| Collector-emitter Voltage-Max | 3V |
| DC Current Gain-Min (hFE) | 70 |
| Highest Frequency Band | L BAND |
| JESD-30 Code | R-PDSO-F6 |
| Max Collector Current | 30mA |
| Max Operating Temperature | 150°C |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 180mW |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 11GHz |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA828TD-A Datasheet
Download the complete datasheet for Renesas UPA828TD-A to view detailed technical specifications.
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