This 512K SRAM memory device features a 16-bit organization and 3-state output characteristics. It operates on 3/3.3V power supplies and is packaged in a TSOP1 rectangular shape with a small outline and thin profile. The device is suitable for use in temperatures ranging from -25°C to 85°C and is manufactured using CMOS technology.
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Technical Specifications
Renesas uPD448012GY-B55X-MJH technical specifications.
General
| Access Time-Max | 55ns |
| Density | 8388608b |
| Height - Seated (Max) | 1.2mm |
| I/O Type | COMMON |
| JESD-30 Code | R-PDSO-G48 |
| JESD-609 Code | e0 |
| Length | 18mm |
| Max Operating Temperature | 85°C |
| Max Supply Current | 50mA |
| Memory Type | SRAM, |
| Memory Width | 16 |
| Min Operating Temperature | -25°C |
| Number of Functions | 1 |
| Number of Words | 524288 |
| Number of Words Code | 512K |
| Organization | 512KX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | Plastic |
| Package Code | TSOP1 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINE, THIN PROFILEMeter |
| Parallel/Serial | PARALLEL |
| Power Supplies | 3/3.3V |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Standby Voltage-Min | 1V |
| Supply Voltage-Max (Vsup) | 3.6V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Pitch | 0.5mm |
| Terminal Position | DUAL |
| Width | 12mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas uPD448012GY-B55X-MJH Datasheet
Download the complete datasheet for Renesas uPD448012GY-B55X-MJH to view detailed technical specifications.
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