The FDB16AN08A0 is a 75V 58A power MOSFET packaged in a TO-263 case. It has a maximum power dissipation of 135W and a drain to source breakdown voltage of 75V. The device has a continuous drain current rating of 58A and a gate to source voltage rating of 20V. It is lead free and available in bulk packaging.
PackageTO-263
Current Rating58A
Power135W
Quick Jump:
Technical Specifications
Rochester Electronics FDB16AN08A0 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 58A |
| Current Rating | 58A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 75V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.86nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 135W |
| DC Rated Voltage | 75V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDB16AN08A0 Datasheet
Download the complete datasheet for Rochester Electronics FDB16AN08A0 to view detailed technical specifications.
No datasheet is available for this part.