This device is a 60 V P-channel logic-level power MOSFET built with PowerTrench technology for power management applications. It supports continuous drain current to -3 A at 25°C, with drain-source on-resistance specified to 105 mΩ maximum at VGS = -10 V and 135 mΩ maximum at VGS = -4.5 V. The part is housed in a SuperSOT-6 package and operates across a junction temperature range of -55°C to +150°C. It is intended for DC-DC converters, load switching, and other compact power-management circuits requiring fast switching and low gate charge.
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| Transistor Type | P-Channel MOSFET |
| Drain-Source Voltage | -60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | -3A |
| Pulsed Drain Current | -20A |
| Power Dissipation | 1.6W |
| Operating Junction Temperature Range | -55 to +150°C |
| Static Drain-Source On-Resistance @ VGS=-10V | 105 maxmΩ |
| Static Drain-Source On-Resistance @ VGS=-4.5V | 135 maxmΩ |
| Gate Threshold Voltage | -1 to -3V |
| Input Capacitance | 759pF |
| Output Capacitance | 90pF |
| Reverse Transfer Capacitance | 39pF |
| Total Gate Charge | 24nC |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 34ns |
| Thermal Resistance Junction-to-Ambient | 78°C/W |
| Package | SuperSOT-6 |
| RoHS | Not Compliant |
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