Rochester Electronics
FDD10AN06A0
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
PackageTO-252
Resistance0.0105R
Current Rating50A
Power135W
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Technical Specifications
Rochester Electronics FDD10AN06A0 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 9.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.84nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 135W |
| Reach SVHC Compliant | Yes |
| Resistance | 0.0105R |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDD10AN06A0 Datasheet
Download the complete datasheet for Rochester Electronics FDD10AN06A0 to view detailed technical specifications.
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