The FDS6898A is a 20V N-Channel MOSFET with a continuous drain current rating of 9.4A and a power dissipation of 2W. It features a drain to source breakdown voltage of 20V and a gate to source voltage of 12V. The device is packaged in a lead-free SOIC package and is compliant with RoHS regulations. The FDS6898A is suitable for use in a variety of applications including power management and switching circuits.
PackageSOIC
Current Rating9.4A
Power2W
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Technical Specifications
Rochester Electronics FDS6898A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | 9.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.82nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS6898A Datasheet
Download the complete datasheet for Rochester Electronics FDS6898A to view detailed technical specifications.
No datasheet is available for this part.