The FDZ193P is a N-Channel MOSFET with a continuous drain current of -3A, drain to source resistance of 66mR, and a maximum drain to source voltage of -20V. It has an input capacitance of 660pF and a power dissipation of 1.5W. The device is lead free and compliant with Reach SVHC regulations. It is packaged in tape and reel format.
Power1.5W
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Technical Specifications
Rochester Electronics FDZ193P technical specifications.
General
| Continuous Drain Current (ID) | -3A |
| Drain to Source Resistance | 66mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 1.5W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDZ193P Datasheet
Download the complete datasheet for Rochester Electronics FDZ193P to view detailed technical specifications.
No datasheet is available for this part.