N-channel Power Mosfet, Qfet®, 1000 V, 8.0 A, 1.45 Ω, TO-3P
Rochester Electronics FQA8N100C technical specifications.
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.45R |
| Drain to Source Voltage (Vdss) | 1kV |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Dissipation | 225W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 1kV |
| RoHS | Not Compliant |
No datasheet is available for this part.
