The FQB33N10TM is a 100V 33A power MOSFET with a drain to source breakdown voltage of 100V and a gate to source voltage of 25V. It has a power dissipation of 127W and is packaged in cut tape. The device is lead free and compliant with Reach SVHC regulations. It can handle a continuous drain current of 33A and has a drain to source resistance of 52mR.
Current Rating33A
Power127W
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Technical Specifications
Rochester Electronics FQB33N10TM technical specifications.
General
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 25V |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 127W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQB33N10TM Datasheet
Download the complete datasheet for Rochester Electronics FQB33N10TM to view detailed technical specifications.
No datasheet is available for this part.