The FQB4P25TM is a 250V 4A N-Channel Power MOSFET from Rochester Electronics. It features a drain to source breakdown voltage of 250V and a power dissipation of 3.13W. The device is lead free and available in bulk packaging. The MOSFET has a gate to source voltage rating of 30V and a drain to source resistance of 1.63R.
Resistance2.1R
Current Rating-4A
Power3.13W
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Technical Specifications
Rochester Electronics FQB4P25TM technical specifications.
General
| Continuous Drain Current (ID) | 4A |
| Current Rating | -4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1.63R |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 3.13W |
| Resistance | 2.1R |
| DC Rated Voltage | -250V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQB4P25TM Datasheet
Download the complete datasheet for Rochester Electronics FQB4P25TM to view detailed technical specifications.
No datasheet is available for this part.