The FQD18N20V2TM is a N-Channel MOSFET with a continuous drain current rating of 15mA and a current rating of 15A. It has a drain to source breakdown voltage of 200V and a drain to source resistance of 140mR. The device is packaged in a TO-252 package and is lead free. It is rated for a power dissipation of 2.5W and has a DC rated voltage of 200V.
PackageTO-252
Current Rating15A
Power2.5W
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Technical Specifications
Rochester Electronics FQD18N20V2TM technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 15mA |
| Current Rating | 15A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FQD18N20V2TM Datasheet
Download the complete datasheet for Rochester Electronics FQD18N20V2TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.