N-channel Power Mosfet, Qfet®, 1000 V, 1.6 A, 9 Ω, Dpak
Rochester Electronics FQD2N100TM technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 1.6mA |
| Current Rating | 1.6A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 7.1R |
| Drain to Source Voltage (Vdss) | 1kV |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 900V |
| RoHS | Not Compliant |
No datasheet is available for this part.
