The FQPF5N60C is a 600V N-Channel Power MOSFET with a continuous drain current of 4.5A and a drain to source breakdown voltage of 600V. It has a drain to source resistance of 2.5 ohms and a power dissipation of 33 watts. The device is packaged in tape and reel and is lead free. It is compliant with Reach SVHC regulations.
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Rochester Electronics FQPF5N60C technical specifications.
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 33W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 600V |
| RoHS | Not Compliant |
No datasheet is available for this part.
