Rochester Electronics
HGTP10N120BN
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
PackageTO-220
Current Rating35A
Power298W
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Technical Specifications
Rochester Electronics HGTP10N120BN technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Current Rating | 35A |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 298W |
| DC Rated Voltage | 1.2kV |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics HGTP10N120BN Datasheet
Download the complete datasheet for Rochester Electronics HGTP10N120BN to view detailed technical specifications.
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