Rochester Electronics
NTJD4152PT1G
Dual P-Channel Small Signal MOSFET with ESD Protection -20V -0.88A 260mΩ
PackageSOT-363
Current Rating-880mA
Power272mW
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Technical Specifications
Rochester Electronics NTJD4152PT1G technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 880mA |
| Current Rating | -880mA |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 272mW |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics NTJD4152PT1G Datasheet
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