Dual P-Channel Small Signal MOSFET with ESD Protection -20V -0.88A 260mΩ
Rochester Electronics NTJD4152PT1G technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 880mA |
| Current Rating | -880mA |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 272mW |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
No datasheet is available for this part.
