The SI3443DV is a SOT-23-6 packaged N-Channel MOSFET with a maximum drain to source voltage of -20V and a gate to source voltage of 8V. It can handle continuous drain currents of up to -4A and has a drain to source resistance of 65mR. The device is lead free and RoHS compliant. Operating temperature range is not specified. The part is packaged on a tape and reel.
PackageSOT-23-6
Power1.6W
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Technical Specifications
Rochester Electronics SI3443DV technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | -4A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 1.6W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics SI3443DV Datasheet
Download the complete datasheet for Rochester Electronics SI3443DV to view detailed technical specifications.
No datasheet is available for this part.