The BST91T1P4K01-VC is a high-performance Silicon Carbide (SiC) power module designed for high-efficiency power conversion applications. It features advanced SiC MOSFET technology to provide low switching losses and high thermal conductivity, suitable for industrial inverters and EV charging infrastructure.
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Technical Specifications
Rohm BST91T1P4K01-VC technical specifications.
General
| Drain-Source Voltage | 1200V |
| Configuration | Half-Bridge |
| Technology | Silicon Carbide (SiC) |
Compliance
| RoHS | Compliant |
Datasheet
Rohm BST91T1P4K01-VC Datasheet
Download the complete datasheet for Rohm BST91T1P4K01-VC to view detailed technical specifications.
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