This N-channel power MOSFET is rated for 60 V drain-source voltage and 120 A drain current. It is supplied in a TO-263AB (D2PAK) package with nominal dimensions of 15.1 x 10.1 x 4.7 mm. Typical on-resistance is 5.1 mΩ at 4.5 V gate drive, and power dissipation is rated at 125 W. The storage temperature range is -55 to 150 °C. ROHM lists this device as not recommended for new design and identifies RS6L120BG as a replacement product.
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Rohm RJ1L12DGN technical specifications.
| Polarity | Nch |
| Drain-Source Voltage | 60V |
| Drain Current | 120.0A |
| On-Resistance RDS(on) Typ @ 4.5V | 0.0051Ω |
| On-Resistance RDS(on) Typ @ Drive | 0.0051Ω |
| Drive Voltage | 4.5V |
| Power Dissipation | 125.0W |
| Storage Temperature Min | -55°C |
| Storage Temperature Max | 150°C |
| Package Size | 15.1x10.1 (t=4.7)mm |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Finish | Pb-free lead plating |
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