This N-channel power MOSFET is rated for 60 V drain-to-source voltage and 47 A drain current. It provides typical on-resistance of 9.6 mΩ at 4.5 V drive and 6.7 mΩ at 10 V drive. The device is supplied in an HSOP8 surface-mount package with eight terminals and body size of 6.0 x 5.0 x 1.1 mm. Typical total gate charge is 19.5 nC and rated power dissipation is 31 W. Storage temperature range is -55 °C to 150 °C, and the product is listed as RoHS compliant.
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Rohm RS1L145GN technical specifications.
| Package | HSOP8 (Single,TB) |
| Package code | HSOP8 |
| Package size | 6.0 x 5.0 x 1.1mm |
| Number of terminals | 8 |
| Channel type | Nch |
| Drain-source voltage (Vdss) | 60V |
| Drain current (Id) | 47.0A |
| On-resistance (typ) @ 4.5 V | 0.0096Ω |
| On-resistance (typ) @ 10 V | 0.0067Ω |
| Drive voltage | 4.5V |
| Power dissipation | 31.0W |
| Total gate charge (typ) | 19.5nC |
| Mounting style | Surface mount |
| Storage temperature minimum | -55°C |
| Storage temperature maximum | 150°C |
| RoHS | Yes |
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