This device is an N-channel power MOSFET rated for 60 V drain-source voltage and 68 A drain current. It is supplied in an HSOP8 surface-mount package with 8 terminals and a nominal package size of 6.0 x 5.0 x 1.1 mm. Typical on-resistance is 5.9 mΩ at 4.5 V gate drive and 4.2 mΩ at 10 V gate drive. Power dissipation is 39 W and total gate charge is typically 34 nC. The storage temperature range is -55 °C to 150 °C. ROHM lists this part as Last Time Buy and states that product discontinuation has been announced.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Rohm RS1L180GN datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm RS1L180GN technical specifications.
| Packaging | Taping |
| RoHS | Yes |
| Package Code | HSOP8 |
| Package Size | 6.0x5.0 (t=1.1)mm |
| Number of Terminals | 8 |
| Polarity | Nch |
| Drain-Source Voltage (VDSS) | 60V |
| Drain Current (ID) | 68.0A |
| On-Resistance RDS(on) Typ @ 4.5V | 0.0059Ohm |
| On-Resistance RDS(on) Typ @ 10V | 0.0042Ohm |
| Drive Voltage | 4.5V |
| Power Dissipation (PD) | 39.0W |
| Total Gate Charge (Qg) Typ | 34.0nC |
| Mounting Style | Surface mount |
| Storage Temperature Min | -55°C |
| Storage Temperature Max | 150°C |
| RoHS | Yes |
Download the complete datasheet for Rohm RS1L180GN to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
