This single N-channel power MOSFET is rated for 60 V drain-source voltage and 100 A drain current. It is offered in an LPTS (TO-263S / D2PAK) surface-mount package with three terminals and a 13.1 x 10.1 x 4.7 mm body. Typical on-resistance is 3.5 mΩ at 4 V gate drive and 3.0 mΩ at 10 V, with 100 W power dissipation and 202 nC typical total gate charge. The device is RoHS compliant, supports storage from -55 to 150 °C, and is listed as obsolete.
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Rohm RSJ10HN06TL technical specifications.
| Drain-Source Voltage | 60V |
| Drain Current | 100.0A |
| On-Resistance RDS(on) Typ @ VGS=4V | 0.0035Ω |
| On-Resistance RDS(on) Typ @ VGS=10V | 0.003Ω |
| Power Dissipation | 100.0W |
| Total Gate Charge Qg Typ | 202.0nC |
| Package | LPTS (TO-263S) |
| Package Code | TO-263 (D2PAK) |
| Package Size | 13.1x10.1 (t=4.7)mm |
| Number of Terminals | 3 |
| Polarity | Nch |
| Mounting Style | Surface mount |
| JEITA Package | SC-83 |
| Storage Temperature Min | -55°C |
| Storage Temperature Max | 150°C |
| RoHS | Yes |
