N-channel advanced power MOSFET supports 100 V drain-source voltage and 140 A continuous drain current at 25 °C case temperature. The device has 7 mΩ typical on-resistance at 10 V gate drive and 70 A drain current. TO-220S packaging uses an insulation slug rated at least 1500 VAC and is supplied in tube packaging. It is avalanche tested, rated for operation up to 175 °C junction temperature, and specified as lead-free and RoHS compliant.
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| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 140 at TC=25°CA |
| Continuous Drain Current | 99 at TC=100°CA |
| Pulsed Drain Current | 560A |
| Gate-Source Voltage | ±25V |
| Drain-Source On-State Resistance | 7 typ, 9 max at VGS=10V, IDS=70AmΩ |
| Gate Threshold Voltage | 2 min, 4 maxV |
| Maximum Power Dissipation | 300 at TC=25°CW |
| Maximum Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.5°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Single-Pulse Avalanche Energy | 552mJ |
| Input Capacitance | 6800pF |
| Output Capacitance | 630pF |
| Reverse Transfer Capacitance | 350pF |
| Total Gate Charge | 130nC |
| Reverse Recovery Time | 43ns |
| Package | TO220S |
| RoHS | Compliant |
| Lead Free | Yes |
| Green Device | Yes |
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