RU55111R is an N-channel advanced power MOSFET in a TO-220 package. The first-page datasheet preview shows a 55 V drain-source rating, a ±20 V gate-source rating, and a 110 A continuous drain current at 25 °C case temperature. It is described as using a super high dense cell design for low on-resistance, with typical RDS(on) values shown for 10 V and 4.5 V gate drive. The datasheet preview also shows a 150 °C maximum junction temperature, a -55 °C to 150 °C storage range, and RoHS-compliant lead-free availability.
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Ruichips RU55111R technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 55V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 110A |
| Continuous Drain Current Test Condition | TC=25°C |
| Maximum Junction Temperature | 150°C |
| Storage Temperature Range | -55 to 150°C |
| Single Pulse Avalanche Energy | 300mJ |
| Package | TO-220 |
| RDS(on) Typ @ VGS=10V | 5mΩ |
| RDS(on) Typ @ VGS=4.5V | 7mΩ |
| RoHS | Compliant |
| Lead Free | Yes |
